AWT6167
GSM900/DCS
Dual Band Power Amplifier Module
With Integrated Power Control
FEATURES
•
•
•
•
•
•
•
Integrated Vreg (regulated supply)
Harmonic Performance
≤
-25 dBm
High Efficiency (PAE) at Pmax:
-GSM900, 56 %
-DCS, 53 %
+35 dBm GSM900 Output Power at 3.5 V
+33 dBm DCS Output Power at 3.5 V
55 dB dynamic range
GPRS Class 12 Capable
ADVANCED PRODUCT INFORMATION - Rev 0.1
AWT6167
APPLICATIONS
•
Dual Band Handsets & PDAs
18 Pin
6 mm x 6 mm x 1.3 mm
Amplifier Module
PRODUCT DESCRIPTION
As with previous generations, the AWT6167
integrated CMOS power control scheme simplifies
the design of the transmitter by eliminating the need
for external power control circuitry.
The AWT6167 input and output terminals are internal
matched to 50 ohms and DC blocked, reducing the
V
CC2
number of external components required in the final
application. Both PA die, GSM900 and DCS, are
fabricated using state of the art InGaP HBT
technology, known for it is proven reliability and
temperature stability.
DCS
IN
B
S
TX
EN
MATCH
MATCH
DCS
OUT
CMOS BIAS/Integrated Power Control
V
BATT
V
REG
V
RAMP
GSM900
IN
V
CC_OUT
H(s)
MATCH
MATCH
GSM900
OUT
V
CC2
Figure 1: Block Diagram
01/2005
ANADIGICS [ ANADIGICS, INC ]
