AWT6168
GSM/GPRS/Polar EDGE Power Amplifier
Module with Integrated Power Control
ADVANCED PRODUCT INFORMATION - REV 0.1
FEATURES
•
Internal Reference Voltage
•
Integrated Power Control Scheme
•
InGaP HBT Technology
•
ESD Protection on All Pins (2.5 kV)
•
Low profile 1.3 mm
•
Small Package Outline 7 mm x 7 mm
•
EGPRS Capable (class 12)
GMSK MODE
•
Integrated power control (CMOS)
•
+35 dBm GSM850/900 Output Power
•
+33 dBm DCS/PCS Output Power
•
55 % GSM850/900 PAE
•
50 % DCS/PCS PAE
•
Power control range > 50 dB
EDGE MODE
•
+30.5 dBm GSM850/900 Output Power
•
+29.5 dBm DCS/PCS Output Power
•
25 % GSM850/900 PAE
•
25 % DCS/PCS PAE
PRODUCT DESCRIPTION
This power amplifier module supports dual, tri and
quad band applications for GMSK and 8-PSK modu-
lation schemes using a polar architecture. There are
two amplifier chains, one to support GSM850/900
bands, the other for DCS/PCS bands.
The module includes an internal reference voltage
and integrated power control scheme for use in both
GMSK and 8-PSK operation. This facilitates fast and
easy production calibration and reduces the num-
ber of external components required to complete a
power control function. The amplifier’s power con-
trol range is typically 55 dB, with the output power set
by applying an analog voltage to V
RAMP
.
All of the RF ports for this device are internally
matched to 50
Ω
. Internal DC blocks are provided at
the RF inputs.
APPLICATIONS
•
GSM850/GSM900/DCS/PCS Handsets
•
Dual/Tri/Quad Band PDA
•
GMSK and 8-PSK Polar Modulation
Schemes
DCS/PCS_IN
DCS/PCS
DCS/PCS_OUT
BS
T
X
_EN
V
BATT
C
EXT
V
RAMP
Bias/Power
Control
GSM850/900_IN
GSM850/900_OUT
GSM850/900
Figure 1: Block Diagram
01/2005
ANADIGICS [ ANADIGICS, INC ]
