aWt6172
GSM/GPRS/EDGE Power Amplifier
Module with Integrated Power Control
PreLIMINarY Data sHeet - rev 1.4
Features
•
InGaP HBT Technology
•
Low profile 1.1 mm
•
Small Package Outline 6 mm x 6 mm
•
EGPRS Capable (class 12)
•
Integrated Reference Voltage
GMsK MODe
•
Integrated power control (CMOS)
•
+35 dBm GSM850/900 Output Power
•
+33 dBm DCS/PCS Output Power
•
55 % GSM850/900 PAE
•
52 % DCS/PCS PAE
•
Power control range > 50 dB
eDGe MODe
•
+28.5 dBm GSM850/900 Output Power
•
+27.5 dBm DCS/PCS Output Power
•
-66 dBc Typical ACPR (400 kHz)
•
-78 dBc Typical ACPR (600 kHz)
PrODuCt DesCrIPtION
This quad band power amplifier module supports dual,
tri and quad band applications for both GMSK and
8-PSK modulation schemes. There are two amplifier
chains, one to support GSM850/900 bands, the other
for DCS/PCS bands.
The module includes an integrated power control
scheme for use in the GMSK mode. This facilitates
fast and easy production calibration and reduces the
number of external components required to complete
a power control function. The amplifier’s power control
range is typically 55 dB, with the output power set by
applying an analog voltage to V
RAMP
.
In EDGE mode, the V
RAMP
pin is disabled and no spe-
cific voltage is required for proper operation. Output
power is controlled by varying the input power.
All of the RF ports for this device are internally matched
to 50Ω.
aPPLICatIONs
•
Dual/Tri/Quad Band Handsets, PDAs and Data
Devices
DCS/PCS_IN
DCS/PCS_OUT
GSM850/900_IN
GSM850/900_OUT
Figure 1: Block Diagram
02/2009
ANADIGICS [ ANADIGICS, INC ]
