AWT6270
HELP
TM
830-840 MHz WCDMA 3.4V/27dBm
Linear Power Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.5
FEATURES
•
•
InGaP HBT Technology
High Efficiency:
44% @ P
OUT
= +27 dBm
21% @ P
OUT
= +16 dBm
15% @ P
OUT
= +7 dBm
•
•
•
•
•
Low Quiescent Current: 16 mA
Low Leakage Current in Shutdown Mode: <1
µA
V
REF
= +2.85 V (+2.75 V min over temp)
Optimized for a 50
Ω
System
Low Profile Miniature Surface Mount Package:
1.61 mm Max
AWT6270
APPLICATIONS
•
Dual Band WCDMA Wireless Handsets
M7 Package
10 Pin 4 mm x 4 mm x 1.6 mm
Surface Mount Module
PRODUCT DESCRIPTION
The AWT6270 meets the increasing demands for
higher output power in UMTS handsets. The PA module
is optimized for V
REF
= +2.85 V, a requirement for
compatibility with the Qualcomm® 6250 chipset. The
device is manufactured on an advanced InGaP HBT
MMIC technology offering state-of-the-art reliability,
temperature stability, and ruggedness. Selectable
bias modes that optimize efficiency for different output
power levels, and a shutdown mode with low leakage
current, increase handset talk and standby time. The
self-contained 4 mm x 4 mm x 1.6 mm surface mount
package incorporates matching networks optimized
for output power, efficiency, and linearity in a 50
Ω
system.
GND at slug (pad)
V
REF
V
MODE
1
2
Bias Control
10
9
8
7
6
GND
GND
RF
OUT
GND
V
CC
GND
3
RF
IN
V
CC
4
5
Figure 1: Block Diagram
01/2005
ANADIGICS [ ANADIGICS, INC ]
