AWT6272R
HELP
TM
Cellular/WCDMA 3.4 V/29 dBm
Linear Power Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.5
FEATURES
•
•
InGaP HBT Technology
High Efficiency:
44 % @ P
OUT
= +29 dBm
20 % @ P
OUT
= +16 dBm
15 % @ P
OUT
= +7 dBm
•
•
•
•
•
•
•
Low Quiescent Current: 16 mA
Low Leakage Current in Shutdown Mode: <1
µA
V
REF
= +2.85 V (+2.75 V min over temp)
Optimized for a 50
Ω
System
Low Profile Miniature Surface Mount Package
Option: 1.1 mm Max
RoHS Compliant Package, 250
o
C MSL-3
HSDPA Compliant (no backoff)
AWT6272R
M20 Package
10 Pin 4 mm x 4 mm x 1.1 mm
Surface Mount Module
APPLICATIONS
•
•
Dual Band WCDMA Wireless Handsets
Dual Mode 3GPP Wireless Handsets
MMIC technology offering state-of-the-art reliability,
temperature stability, and ruggedness. Selectable bias
modes that optimize efficiency for different output power
levels, and a shutdown mode with low leakage current,
increase handset talk and standby time. The self-
contained 4 mm x 4 mm x 1.1 mm surface mount
package incorporates matching networks optimized
for output power, efficiency, and linearity in a 50
Ω
system.
PRODUCT DESCRIPTION
The AWT6272R meets the increasing demands for
higher output power in UMTS handsets. The PA module
is optimized for V
REF
= +2.85 V, a requirement for
compatibility with the Qualcomm® 6250 chipset. The
device is manufactured on an advanced InGaP HBT
GND at slug (pad)
V
REF
1
10
GND
GND
RF
OUT
GND
V
CC
V
MODE
2
GND
3
RF
IN
V
CC
4
Bias Control
9
8
7
5
6
Figure 1: Block Diagram
05/2006
ANADIGICS [ ANADIGICS, INC ]
