HELP
FEATURES
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TM
Cellular/WCDMA 3.4 V/29 dBm
Linear Power Amplifier Module
Data Sheet - Rev 2.1
AWT6272
InGaP HBT Technology
High Efficiency:
44 % @ P
OUT
= +29 dBm
20 % @ P
OUT
= +16 dBm
15 % @ P
OUT
= +7 dBm
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Low Quiescent Current: 16 mA
Low Leakage Current in Shutdown Mode: <1
µA
V
REF
= +2.85 V (+2.75 V min over temp)
Optimized for a 50
Ω
System
Low Profile Miniature Surface Mount Package
RoHS Compliant Package, 250
o
C MSL-3
HSPA Compliant (no backoff)
WCDMA/HSPA Cell-Band Wireless Handsets and
Data Devices
AWT6272R
APPLICATIONS
M20 Package
10 Pin 4 mm x 4 mm x 1 mm
Surface Mount Module
PRODUCT DESCRIPTION
The AWT6272 meets the increasing demands for
higher output power in UMTS handsets. The PA
module is optimized for V
REF
= +2.85 V, a requirement for
compatibility with the Qualcomm® 6250 chipset. The
device is manufactured on an advanced InGaP HBT
MMIC technology offering state-of-the-art reliability,
temperature stability, and ruggedness. Selectable
bias modes that optimize efficiency for different output
power levels, and a shutdown mode with low leakage
current, increase handset talk and standby-time. The
self-contained 4 mm x 4 mm x 1 mm surface mount
package incorporates matching networks optimized for
output power, efficiency, and linearity in a 50
Ω
system.
GND at slug (pad)
V
REF
V
MODE
1
2
Bias Control
10
9
8
7
6
GND
GND
RF
OUT
GND
V
CC
GND
3
RF
IN
V
CC
4
5
Figure 1: Block Diagram
11/2008
ANADIGICS [ ANADIGICS, INC ]
