HELP IMT/WCDMA 3.4V/27.5dBm
Linear Power Amplifier Module
TM
AWT6275
•
FEATURES
•
InGaP HBT Technology
Data Sheet - Rev 2.2
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•
•
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High Efficiency:
43% @ P
OUT
= +27.5 dBm
21% @ P
OUT
= +16 dBm
15% @ P
OUT
= +7 dBm
Low Quiescent Current: 16 mA
Low Leakage Current in Shutdown Mode:<1 mA
V
REF
= +2.85 V (+2.75 V min over temp)
Optimized for a 50
V
System
Low Profile Miniature Surface Mount Package
RoHS Compliant Package, 250
o
C MSL-3
HSPA Capable
AWT6275
APPLICATIONS
•
WCDMA/HSPA IMT-Band Wireless Handsets
and Data Devices
PRODUCT DESCRIPTION
The AWT6275 meets the increasing demands for
higher output power in UMTS handsets. The PA
module is optimized for V
REF
= +2.85 V, a require-
ment for compatibility with the Qualcomm® 6250
chipset. The device is manufactured on an ad-
vanced InGaP HBT MMIC technology offering
state-of-the-art reliability, temperature stability, and
ruggedness. Selectable bias modes that optimize
efficiency for different output power levels, and a
M20 Package
10 Pin 4 mm x 4 mm x 1 mm
Surface Mount Module
shutdown mode with low leakage current, increase
handset talk and standby time. The self-contained
4 mm x 4 mm x 1 mm surface mount package
incorporates matching networks optimized for output
power, efficiency, and linearity in a 50
V
system.
GND at slug (pad)
V
CC
RF
IN
GND
1
2
3
Bias Control
10
V
CC
9
8
7
6
Figure 1: Block Diagram
11/2008
GND
RF
OUT
GND
GND
V
MODE
4
V
REF
5
ANADIGICS [ ANADIGICS, INC ]
