HELP
FEATURES
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TM
IMT/WCDMA 3.4 V/28.5 dBm
Linear Power Amplifier Module
Data Sheet - Rev 2.1
AWT6277R
InGaP HBT Technology
High Efficiency:
44% @ P
OUT
= +28.5 dBm
21% @ P
OUT
= +16 dBm
16% @ P
OUT
= +7 dBm
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Low Quiescent Current: 15 mA
Low Leakage Current in Shutdown Mode: <1
µA
V
REF
= +2.85 V (+2.75 V min over temp)
Optimized for a 50
Ω
System
Low Profile Miniature Surface Mount Package
RoHS Compliant Package Option, 250
o
C MSL-3
HSPA Compliant (no backoff)
WCDMA/HSPA IMT-Band Wireless Handsets and
Data Devices
AWT6277R
APPLICATIONS
M20 Package
10 Pin 4 mm x 4 mm x 1 mm
Surface Mount Module
The AWT6277 meets the increasing demands for
higher output power in UMTS handsets. The PA
module is optimized for V
REF
= +2.85 V, a requirement
for compatibility with the Qualcomm® 6250 chipset.
The device is manufactured on an advanced InGaP
HBT MMIC technology offering state-of-the-art
reliability, temperature stability, and ruggedness.
Selectable bias modes that optimize efficiency for
PRODUCT DESCRIPTION
different output power levels, and a shutdown mode
with low leakage current, increase handset talk and
standby time. The self-contained 4 mm x 4 mm x 1
mm surface mount package incorporates matching
networks optimized for output power, efficiency, and
linearity in a 50
Ω
system.
GND at slug (pad)
V
CC
RF
IN
GND
1
2
3
Bias Control
10
V
CC
9
8
7
6
GND
RF
OUT
GND
GND
V
MODE
4
V
REF
5
Figure 1: Block Diagram
11/2008
ANADIGICS [ ANADIGICS, INC ]
