Features
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Quad-band GsM/GPrs/Polar eDGe
Power Amplifier Module
with Integrated Power Control
Data Sheet - Rev 2.1
aWt6280
Internal Reference Voltage
Integrated Power Control
InGaP HBT Technology
ESD Protection on All Pins (2.5 kV)
Low profile 1.0 mm
Small Package Outline 7 mm x 7 mm
EGPRS Capable (class 12)
RoHS Compliant Package, 250
o
C MSL-3
AW
T
GMsK MODe
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+35 dBm GSM850/900 Output Power
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+33 dBm DCS/PCS Output Power
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55 % GSM850/900 PAE
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52 % DCS/PCS PAE
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Power control range > 50 dB
eDGe MODe
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+29 dBm GSM850/900 Output Power
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+28.5 dBm DCS/PCS Output Power
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29 % GSM850/900 PAE
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30 % DCS/PCS PAE
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-64 dBc Typical ACPR (400 kHz)
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-74 dBc Typical ACPR (600 kHz)
628
0R
M11 Package
18 Pin 7 mm x 7 mm x 1.0 mm
surface Mount Module
aPPLICatIONs
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Dual/Tri/Quad Band Handsets, PDAs, and
Data Devices
PrODuCt DesCrIPtION
This power amplifier module supports dual, tri and
quad band applications for GMSK and 8-PSK modu-
lation schemes using an open loop polar architec-
ture. There are two amplifier chains, one to support
GSM850/900 bands, the other for DCS/PCS bands.
Each amplification chain is optimized for excellent
EDGE efficiency, power, and linearity in a Polar loop
environment while maintaining high efficiency in the
GSM/GPRS mode.
The module includes an internal reference voltage
and integrated power control scheme for use in both
GMSK and 8-PSK operation. This facilitates fast and
easy production calibration and reduces the number
of external components required to complete a power
control function.
The amplifier’s power control range is typically 55 dB,
with the output power set by applying an analog volt-
age to V
RAMP
. All of the RF ports for this device are DC
blocked and internally matched to 50 .
DCS/PCS_IN
DCS/PCS
DCS/PCS_OUT
BS
T
X
_EN
V
BATT
C
EXT
V
RAMP
GSM850/900_IN
Bias/Power
Control
GSM850/900_OUT
GSM850/900
Figure 1: Block Diagram
11/2008
ANADIGICS [ ANADIGICS, INC ]
