Cellular Dual Mode AMPS/CDMA
3.4 V/28 dBm Linear Power Amplifier Module
ADVANCED PRODUCT INFORMATION - Rev 0.1
AWT6301
FEATURES
InGaP HBT Technology
High Efficiency: 53 % AMPS, 39 % CDMA
Low Quiescent Current: 50 mA
Low Leakage Current in Shutdown Mode: <1
mA
V
REF
= +2.85 V (+2.7 V Min Over Temp.)
Optimized for a 50
W
System
Low Profile Surface Mount Package: 1.1mm
CDMA 1XRTT, 1xEV-DO Compliant
Pinout Enables Easy Phone Board Migration
From 4mm x 4mm Package
APPLICATIONS
Single Mode CDMA Wireless Handsets
Dual Mode AMPS/CDMA Wireless Handsets
M9 Package
8 Pin 3mm x 3mm
Surface Mount Module
art reliability, temperature stability, and ruggedness.
Selectable bias modes that optimize efficiency for
different output power levels, and a shutdown mode
with low leakage current, serve to increase handset
talk and standby time. The self contained 3mm x
3mm surface mount package incorporates matching
networks optimized for output power, efficiency and
linearity in a 50
W
system.
PRODUCT DESCRIPTION
The AWT6301 meets the increasing demands for
higher efficiency and linearity in AMPS/CDMA 1X
handsets, while reducing pcb area by 44%. The
package pinout was chosen to enable handset
manufacturers to switch from a 4mm x 4mm PA
module with very few layout changes to the phone
board. The device is manufactured on an advanced
InGaP HBT MMIC technology offering state-of-the-
GND at slug (pad)
V
REF
1
Bias Control
8
GND
V
MODE
2
7
RF
OUT
RF
IN
3
6
GND
V
CC1
4
Figure 1: Block Diagram
10/2003
5
V
CC2
ANADIGICS [ ANADIGICS, INC ]
