HELP2 PCS/CDMA 3.4V/28dBm
Linear Power Amplifier Module
TM
AWT6308R
FEATURES
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Data Sheet - Rev 2.3
InGaP HBT Technology
High Efficiency:
40 % @ +28 dBm output
19 % @ +16 dBm output
Low Quiescent Current: 15 mA
Low Leakage Current in Shutdown Mode: <1
µA
Internal Voltage Regulation
Optimized for a 50
Ω
System
Low Profile Miniature Surface Mount Package:
1 mm
CDMA 1XRTT, 1xEV-DO Compliant
Pinout Enables Easy Phone Board Migration
From 4 mm x 4 mm Package
RoHS-Compliant Package, 250
C MSL-3
o
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AW
T
630
8R
APPLICATIONS
M9 Package
8 Pin 3 mm x 3 mm x 1 mm
Surface Mount Module
CDMA/EVDO PCS-band Wireless Handsets and
Data Devices
PRODUCT DESCRIPTION
The AWT6308R meets the increasing demands
for higher efficiency and smaller footprint in CDMA
1X handsets. The package pinout was chosen to
enable handset manufacturers to switch from a
4 mm x 4 mm PA module with few layout changes
while reducing board area requirements by 44%.
The AWT6308R uses ANADIGICS’ exclusive InGaP-
Plus™ technology, which combines HBT and pHEMT
devices on the same die, to enable state-of-the-art
reliability, temperature stability, and ruggedness. The
AWT6308R is part of ANADIGICS’ High-Efficiency-
at-Low-Power (HELP™) family of CDMA power
amplifiers, which deliver low quiescent currents and
significantly greater efficiency without a costly external
DAC or DC-DC converter. Through selectable bias
modes, the AWT6308R achieves optimal efficiency
across different output power levels, specifically
at low- and mid-range power levels where the PA
typically operates, thereby dramatically increasing
handset talk-time and standby-time. Its built-in
voltage regulator eliminates the need for external
voltage regulation components. The 3 mm x 3 mm x
1 mm surface mount package incorporates matching
networks optimized for output power, efficiency, and
linearity in a 50
Ω
system.
GND
at
slug (pad)
V
BATT
1
8
V
CC
RF
IN
2
7
RF
OUT
V
MODE
3
Bias
Control
6
GND
V
EN
4
5
GND
Figure 1: Block Diagram
10/2008
ANADIGICS [ ANADIGICS, INC ]
