HELP3DC UMTS1900 (Band 2)
LTE/WCDMA/CDMA Linear PA Module
TM
AWT6632
DATA SHEET - Rev 2.1
FEATURES
•
•
•
•
CDMA/EVDO, WCDMA/HSPA, LTE Compliant
3rd Generation HELP
TM
technology
•
High Efficiency: (R99 waveform)
40 % @ P
OUT
= +29 dBm
•
• 22 % @ P
OUT
= +16.75 dBm
Simpler Calibration with only 2 Bias Modes
Optimized for SMPS Supply
AWT6632
•
Low Quiescent Current: 8 mA
•
Low Leakage Current in Shutdown Mode: <5 µA
•
Internal Voltage Regulator
•
•
Integrated “daisy chainable” directional couplers
with CPL
IN
and CPL
OUT
Ports
Optimized for a 50
Ω System
10 Pin 3 mm x 3 mm x 1 mm
Surface Mount Module
ruggedness. There are two selectable bias modes
that optimize efficiency for different output power
levels, and a shutdown mode with low leakage current,
which increases handset talk and standby time. The
self-contained 3 mm x 3 mm x 1 mm surface mount
package incorporates matching networks optimized for
output power, efficiency, and linearity in a 50 Ω system.
GND at Slug (pad)
•
Low Profile Miniature Surface Mount Package
•
Internal DC blocks on IN/OUT RF ports
•
1.8 V Control Logic
•
RoHS Compliant Package, 260
o
C MSL-3
APPLICATIONS
•
Wireless Handsets and Data Devices for:
•
WCDMA/HSPA/LTE PCS Band 2
• CDMA/EVDO Bandclass 1 & 14
• Band 25 LTE Devices
PRODUCT DESCRIPTION
The AWT6632 PA is designed to provide highly linear
output for WCDMA, CDMA and LTE handsets and
data devices with high efficiency at both high and
low power modes. This HELP3DC
TM
PA can be
used with an external switch mode power supply
(SMPS) to improve its efficiency and reduce current
consumption further at medium and low output
powers. A “daisy chainable” directional coupler is
integrated in the module thus eliminating the need
of external couplers. The device is manufactured on
an advanced InGaP HBT MMIC technology offering
state-of-the-art reliability, temperature stability, and
V
BATT
1
10
V
CC
RF
IN
2
CPL
9
RF
OUT
V
MODE2
(N/C)
3
Bias Control
Voltage Regulation
8
CPL
IN
V
MODE1
4
7
GND
V
EN
5
6
CPL
OUT
Figure 1: Block Diagram
02/2012