HELP3DC
TM
(Band 5)
LTE/WCDMA/CDMA Linear PA Module
FEATURES
•
•
•
CDMA/EVDO, WCDMA/HSPA and LTE
compliant
3
rd
Generation HELP
TM
technology
• 40 % @ P
OUT
= +28.5 dBm
• 21.5 % @ P
OUT
= +17 dBm
Optimized for SMPS Supply
AWT6635
PRELIMINARY DATASHEET
-
Rev 1.3
•
High Efficiency: (R99 waveform)
AWT6635
•
Simpler Calibration with only 2 Bias modes
•
Low Quiescent Current: 9 mA
•
Low Leakage Current in Shutdown Mode: <5 µA
•
Internal Voltage Regulator
•
Integrated “daisy chainable” directional couplers
with CPL
IN
and CPL
OUT
Ports
•
Optimized for a 50 Ω System
•
Low Profile Miniature Surface Mount Package
•
Internal DC blocks on IN/OUT RF ports
•
1.8 V Control Logic
•
RoHS Compliant Package, 260
o
C MSL-3
ruggedness. There are two selectable bias modes
that optimize efficiency for different output power
levels, and a shutdown mode with low leakage current,
which increases handset talk and standby time. The
self-contained 3 mm x 3 mm x 1 mm surface mount
package incorporates matching networks optimized for
output power, efficiency, and linearity in a 50 Ω system.
GND at Slug (pad)
10 Pin 3 mm x 3 mm x 1 mm
Surface Mount Module
APPLICATIONS
•
Wireless Handsets and Data Devices for:
•
WCDMA/HSPA and LTE Cell-Band
• CDMA/EVDO Band Class 0 & 10
PRODUCT DESCRIPTION
The AWT6635 PA is designed to provide highly linear
output for WCDMA ,CDMA and LTE handsets and
data devices with high efficiency at both high and
low power modes. This HELP3DC
TM
PA can be
used with an external switch mode power supply
(SMPS) to improve its efficiency and reduce current
consumption further at medium and low output
powers. A “daisy chainable” directional coupler is
integrated in the module thus eliminating the need
of external couplers. The device is manufactured on
an advanced InGaP HBT MMIC technology offering
state-of-the-art reliability, temperature stability, and
V
BATT
1
10
V
CC
RF
IN
2
CPL
9
RF
OUT
V
MODE2
(N/C)
3
Bias Control
Voltage Regulation
8
CPL
IN
V
MODE1
4
7
GND
V
EN
5
6
CPL
OUT
Figure 1: Block Diagram
02/2012