HELP3E Dual-band Cell & PCS WCDMA
3.4 V Linear Power Amplifier Module
TM
AWU6615
•
•
FEATURES
Data Sheet - Rev 2.6
InGaP HBT Technology
High Efficiency:
• 39 % @ P
OUT
= +28.7 dBm
• 22 % @ P
OUT
= +16.6 dBm
• 9 % @ P
OUT
= +8 dBm
•
•
•
•
•
•
•
•
Low Quiescent Current: 4.5 mA
Internal Voltage Regulation
Built-in Directional Coupler
Common V
MODE
Control Line
Simplified V
CC
Bus PCB routing
Reduced External Component Count
Low Profile Surface Mount Package: 1 mm
RoHS Compliant Package, 260
o
C MSL-3
AW
U66
1
5
APPLICATIONS
•
Cell & PCS Dual-band Wireless Handsets and
Data Devices for HSDPA/HSPA networks.
PRODUCT DESCRIPTION
AWU6615 addresses the demand for increased
integration in dual-band handsets for WCDMA
networks. The small footprint 3 mm x 5 mm x 1
mm surface- mount RoHS compliant package
contains independent RF PA paths to ensure optimal
performance in both frequency bands, while achieving
a 25% PCB space savings compared with solutions
requiring two single-band PAs. The package pinout
was chosen to enable handset manufacturers to easily
route bias to both power amplifiers and simplify control
with common mode pins. The device is manufactured
on an advanced InGaP HBT MMIC technology offering
state-of-the-art reliability, temperature stability, and
ruggedness. The AWU6615 is part of ANADIGICS’
High-Efficiency-at-Low-Power (HELP™) family of
WCDMA power amplifiers, which deliver low quiescent
currents and significantly greater efficiency without
the need of an external DC-DC converter. Through
selectable bias modes, the AWU6615 achieves
optimal efficiency, specifically at low- and mid-range
power levels where the PA typically operates, thereby
dramatically increasing handset talk-time. Its built-in
voltage regulator eliminates the need for external
BS
O
LE
V
EN_CELL
1
switches. This PA has built-in directional couplers
for each band, with a common coupler output port
CPL_OUT. These couplers provide high directivity and
23 dB Coupling. The 3 mm x 5 mm x 1 mm surface
mount package incorporates matching networks
optimized for output power, efficiency and linearity in
a 50
Ω
system.
14
GND
Bias Control
Voltage Regulation
TE
RF
IN_CELL
2
M47 Package
14 Pin 3 mm x 5 mm x 1 mm
Surface Mount Module
O
CPL
13
RF
OUT_CELL
V
MODE1
3
12
V
CC
V
BATT
4
11
V
CC
A
V
MODE2
5
10
CPL
OUT
RF
IN_PCS
6
Bias Control
Voltage Regulation
CPL
9
GND
V
EN_PCS
7
8
RF
OUT_PCS
GND at Slug (pad)
Figure 1: Block Diagram
02/2012