PD1M
1mm InGaAs Photodiode
FEATURES
•
•
•
•
Planar Structure
Dielectric Passivation
High Shunt Resistance
High Responsivity
APPLICATIONS
•
•
Sensing
High Sensitivity Instrumentation
PD1M-0xx
Ceramic Sub-Mount
PD1M-1xx
TO46 can Package
PRODUCT DESCRIPTION
The PD1M is an InGaAs photodiode with a
photosensitive region 1mm in diameter.
Applications include sensing and other high
sensitivity instrumentation. Class A devices
feature very low dark current and high shunt
resistance.
High reliability is assured through planar
semiconductor design and dielectric passivation.
The device can be assembled on a ceramic sub-
mount or in an hermetic TO46 can. Custom
packages are an option.
ELECTRICAL CHARACTERISTICS
Table 1: Electrical Specifications
PARAMETER
Dark Current (I
D
)
(1)
Capacitance
(2)
Responsivity at 1310nm
Responsivity at 1550nm
Rise/Fall time
Shunt Resistance (Class A)
(2)
Shunt Resistance (Class B)
(2)
(1) 1V reverse bias
(2) 0V reverse bias
MIN
-
-
0.80
0.85
-
50
1
TYP
50
150
0.90
0.95
15
-
-
MAX
-
-
-
-
-
-
-
UNIT
nA
pF
A/W
A/W
ns
MΩ
MΩ
ANADIGICS [ ANADIGICS, INC ]
