RFS1003
5.1-5.9 GHz U-NII Power Amplifier
Applications
• U-NII fixed-wireless CPE
• 5 GHz ISM band wireless equipment
• WLAN/802.11a/HIPERLAN/2
Product Description
The RFS1003 power amplifier is a high-power, high-
performance GaAs MESFET IC designed for use in
transmit applications in the 5.1-5.9 GHz frequency
band. With a P1dB of 29 dBm, the device is ideal as a
final stage for wireless applications requiring high
transmit linearity. The input of the PA is matched to 50
ohms and the output can be easily matched for optimum
linearity and power performance at the desired
frequency of operation between 5.1 and 5.9 GHz.
GND
GND
GND
VD2
VD1
24
N/C
23
22
21
20
19
N/C
1
2
Interstage
Match
18
17
16
Input
Match
N/C
N/C
GND
GND
3
4
5
6
Interstage
Match
RF OUT
Product Features
•
•
•
•
•
29 dBm P1dB@7V
24 dBm P1dB@3V
20 dB gain
Input matched to 50 ohms
Simple output matching
RF IN
15
14
13
RF OUT
GND
RF OUT
N/C
GND
7
GND
8
VG1
9
GND
10
VG2
11
GND
12
VG3
Functional Block Diagram
1.00
0.80
4.00
4
0.45
0.35
0.275
0.225
Pin 1
24
1
1 ALL DIMENSIONS ARE IN
MILLIMETERS, ANGLES IN DEGREES.
2 THE TERMINAL #1 IDENTIFIER AND
PAD NUMBERING CONVENTION SHALL
CONFORM TO JESD 95-1 SPP-012
3 LEAD COPLANARITY: 0.05 MAX.
4 DIMENSION APPLIES TO METALLIZED
PAD AND IS MEASURED BETWEEN 0.25
AND 0.30 MM FROM PAD TIP.
INDEX AREA
4.00
0.50 TYP
0.05
1.00
2.80 SQ
TOP VIEW
SIDE VIEW
BOTTOM VIEW
4x4 mm Package Outline
05/2003
ANADIGICS [ ANADIGICS, INC ]
