30V N-Channel Power MOSFET
General Description
The AAT7126 30V N-Channel Power MOSFET is a
member of AnalogicTech™'s TrenchDMOS™
product family. Using the ultra-high density propri-
etary TrenchDMOS technology, this product
demonstrates high power handling and small size.
AAT7126
Features
•
•
•
V
DS(MAX)
= 30V
I
D(MAX)
1
= 6.8A @ 25°C
Low R
DS(ON)
:
• 26 mΩ @V
GS
= 10V
• 41 mΩ @ V
GS
= 4.5V
Applications
•
•
•
•
Battery-powered portable equipment
Laptop computers
Desktop computers
DC/DC converters
Dual SOP-8 Package
Preliminary Information
Top View
D1
8
D1
7
D2
6
D2
5
1
S1
2
G1
3
S2
4
G2
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
STG
(T
A
=25°C unless otherwise noted)
Value
30
±20
±6.8
±5.4
±24
1.7
2.0
1.25
-55 to 150
Description
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
J
=150°C
1
Units
V
T
A
= 25°C
T
A
= 70°C
Pulsed Drain Current
Continuous Source Current (Source-Drain Diode)
1
T
A
= 25°C
Maximum Power Dissipation
1
T
A
= 70°C
Operating Junction and Storage Temperature Range
A
W
°C
Thermal Characteristics
Symbol
R
θJA
R
θJA2
R
ΘJC
Description
Typical Junction-to-Ambient steady state, one FET on
Industry Standard Junction-to-Ambient Figure, t < 10 sec.
Typical Junction-to-Case, one FET on
Value
100
62.5
35
Units
°C/W
°C/W
°C/W
7126.2002.10.0.9
1
ANALOGICTECH [ ADVANCED ANALOGIC TECHNOLOGIES ]
