20V P-Channel Power MOSFET
Electrical Characteristics
Symbol
Description
(T
J
=25°C unless otherwise noted)
Conditions
Min
-20
29
49
-24
-0.6
±100
-1
-5
12
14
2.3
5.5
10
37
36
52
-1.5
-1.5
36
62
AAT7157
Typ
Max
Units
V
mΩ
A
V
nA
µA
S
DC Characteristics
BV
DSS
Drain-Source Breakdown Voltage V
GS
=0V, I
D
=-250µA
V
GS
=-4.5V, I
D
=-5.8A
R
DS(ON)
Drain-Source ON-Resistance
2
V
GS
=-2.5V, I
D
=-4.4A
I
D(ON)
On-State Drain Current
2
V
GS
=-4.5V, V
DS
=5V (Pulsed)
V
GS(th)
Gate Threshold Voltage
V
GS
=V
DS
, I
D
=-250µA
I
GSS
Gate-Body Leakage Current
V
GS
=±12V, V
DS
=0V
V
GS
=0V, V
DS
=-20V
I
DSS
Drain Source Leakage Current
V
GS
=0V, V
DS
=-16V, T
J
=70°C
3
g
fs
Forward Transconductance
2
V
DS
=-5V, I
D
=-5.8A
Dynamic Characteristics
3
Q
G
Total Gate Charge
V
DS
=-15V, R
D
=2.6Ω, V
GS
=-4.5V
Q
GS
Gate-Source Charge
V
DS
=-15V, R
D
=2.6Ω, V
GS
=-4.5V
Q
GD
Gate-Drain Charge
V
DS
=-15V, R
D
=2.6Ω, V
GS
=-4.5V
t
D(ON)
Turn-ON Delay
V
DS
=-15V, R
D
=2.6Ω, V
GS
=-4.5V,
t
R
Turn-ON Rise Time
V
DS
=-15V, R
D
=2.6Ω, V
GS
=-4.5V,
t
D(OFF)
Turn-OFF Delay
V
DS
=-15V, R
D
=2.6Ω, V
GS
=-4.5V,
t
F
Turn-OFF Fall Time
V
DS
=-15V, R
D
=2.6Ω, V
GS
=-4.5V,
Source-Drain Diode Characteristics
V
SD
Source-Drain Forward Voltage
2
V
GS
=0, I
S
=-5.8A
I
S
Continuous Diode Current
1
nC
R
G
=6Ω
R
G
=6Ω
R
G
=6Ω
R
G
=6Ω
ns
V
A
Note 1: Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 10 second
pulse on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. R
θJF
+ R
θFA
= R
θJA
where the foot thermal reference is defined as the normal solder mounting surface of the device's leads. R
θJF
is guaranteed by design,
however R
θCA
is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
Note 2: Pulse test: Pulse Width = 300 µs
Note 3: Guaranteed by design. Not subject to production testing.
2
7157.2004.04.1.0
ANALOGICTECH [ ADVANCED ANALOGIC TECHNOLOGIES ]
