AAT7551
20V P-Channel Power MOSFET
General Description
The AAT7551 is a dual low threshold P-channel
MOSFET designed for the battery, cell phone, and
PDA markets. Using AnalogicTech's ultra-high-
density MOSFET process and space-saving,
small outline, J-lead package, performance supe-
rior to that normally found in a TSOP-6 footprint
has been squeezed into the footprint of an
SC70JW-8 package.
Features
•
•
•
Drain-Source Voltage (max): -20V
Continuous Drain Current
1
(max):
-2.7A @ 25°C
Low On-Resistance:
— 100mΩ @ V
GS
= -4.5V
— 175mΩ @ V
GS
= -2.5V
Dual SC70JW-8 Package
Top View
D1
8
D1
7
D2
6
D2
5
Applications
•
•
•
Battery Packs
Battery-Powered Portable Equipment
Cellular and Cordless Telephones
Absolute Maximum Ratings
T
A
= 25°C, unless otherwise noted.
Symbol
V
DS
V
GS
I
D
I
DM
I
S
T
J
T
STG
1
S1
2
G1
3
S2
4
G2
Description
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
J
= 150°C
1
Pulsed Drain Current
2
Continuous Source Current (Source-Drain Diode)
1
Operating Junction Temperature Range
Storage Temperature Range
T
A
= 25°C
T
A
= 70°C
Value
-20
±12
±2.7
±2.2
±8
-0.6
-55 to 150
-55 to 150
Units
V
A
°C
°C
Thermal Characteristics
1
Symbol
R
θJA
R
θJA2
R
θJF
P
D
Description
Junction-to-Ambient Steady State
Junction-to-Ambient t<5 Seconds
Junction-to-Foot
Maximum Power Dissipation
T
A
= 25°C
T
A
= 70°C
Typ
132
83
60
Max
165
104
72
1.2
0.75
Units
°C/W
W
1. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a
1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. R
θJF
+ R
θFA
= R
θJA
where
the foot thermal reference is defined as the normal solder mounting surface of the device's leads. R
θJF
is guaranteed by design;
however, R
θCA
is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
2. Pulse test: Pulse Width = 300µs.
7551.2005.04.1.0
1
ANALOGICTECH [ ADVANCED ANALOGIC TECHNOLOGIES ]
