AAT8107
20V P-Channel Power MOSFET
General Description
The AAT8107 low threshold 20V, P-channel MOS-
FET is a member of AnalogicTech's TrenchDMOS
product family. Using an ultra-high density propri-
etary TrenchDMOS technology, the AAT8107 is
designed for use as a load switch in battery-pow-
ered applications and protection in battery packs.
Features
•
•
•
TrenchDMOS
™
V
DS(MAX)
= -20V
I
D(MAX)
1
= -6.5A @ 25°C
Low R
DS(ON)
:
• 35mΩ @ V
GS
= -4.5V
• 60mΩ @ V
GS
= -2.5V
Applications
•
•
Battery Packs
Battery-Powered Portable Equipment
SOP-8L Package
Top View
D
8
D
7
D
6
D
5
Absolute Maximum Ratings
T
A
= 25°C, unless otherwise noted.
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
STG
1
S
2
S
3
S
4
G
Description
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
J
=150°C
1
Pulsed Drain Current
2
Continuous Source Current (Source-Drain Diode)
1
Maximum Power Dissipation
1
Operating Junction and Storage Temperature Range
T
A
= 25°C
T
A
= 70°C
T
A
= 25°C
T
A
= 70°C
Value
-20
±12
±6.5
±5.2
±32
-1.7
2.5
1.6
-55 to 150
Units
V
A
W
°C
Thermal Characteristics
Symbol
R
θJA
R
θJA2
R
θJF
Description
Typical Junction-to-Ambient Steady State
1
Maximum Junction-to-Ambient t<10 Seconds
1
Typical Junction-to-Foot
1
Value
80
50
27
Units
°C/W
1. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 10-second pulse on a
1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. R
θJF
+ R
θFA
= R
θJA
where the
foot thermal reference is defined as the normal solder mounting surface of the device's leads. R
θJF
is guaranteed by design; however,
R
θCA
is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
2. Pulse test: Pulse Width = 300µs.
8107.2005.05.1.1
1
ANALOGICTECH [ ADVANCED ANALOGIC TECHNOLOGIES ]
