20V P-Channel Power MOSFET
General Description
The AAT8303 is a low threshold P Channel MOS-
FET designed for the battery, cell phone, and PDA
markets. Using AnalogicTech™'s proprietary ultra-
high density Trench technology, and space saving
small outline J-lead package, performance superi-
or to that normally found in a larger footprint has
been squeezed into the area of a TSOP6 package.
AAT8303
Features
•
•
•
V
DS(MAX)
= -20V
I
D(MAX)
1
= -10A @ 25°C
Low R
DS(ON)
:
• 14 mΩ @ V
GS
= -4.5V
• 24 mΩ @ V
GS
= -2.5V
TSOPJW-8 Package
Applications
•
•
•
•
Battery Packs
Cellular & Cordless Telephones
Battery-powered portable equipment
Load Switches
D
8
Preliminary Information
Top View
D
7
D
6
D
5
1
S
2
S
3
S
4
G
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
STG
(T
A
=25°C unless otherwise noted)
Value
-20
±12
±10
±8
±48
-2.3
2.3
1.5
-55 to 150
Description
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
J
=150°C
1
Units
V
T
A
= 25°C
T
A
= 70°C
1
Pulsed Drain Current
2
Continuous Source Current (Source-Drain Diode)
Maximum Power Dissipation
1
A
T
A
= 25°C
T
A
= 70°C
W
°C
Operating Junction and Storage Temperature Range
Thermal Characteristics
Symbol
R
θJA
R
θJA2
R
θJF
Description
Junction-to-Ambient steady state
1
Junction-to-Ambient t<5 seconds
1
Junction-to-Foot
1
Typ
86
44
27
Max
105
54
32
Units
°C/W
°C/W
°C/W
8303.2003.09.0.62
1
ANALOGICTECH [ ADVANCED ANALOGIC TECHNOLOGIES ]
