欢迎访问ic37.com |
会员登录 免费注册
发布采购

AAT8401 参数 Datasheet PDF下载

AAT8401图片预览
型号: AAT8401
PDF下载: 下载PDF文件 查看货源
内容描述: 20V P沟道功率MOSFET [20V P-Channel Power MOSFET]
分类和应用:
文件页数/大小: 6 页 / 155 K
品牌: ANALOGICTECH [ ADVANCED ANALOGIC TECHNOLOGIES ]
 浏览型号AAT8401的Datasheet PDF文件第2页浏览型号AAT8401的Datasheet PDF文件第3页浏览型号AAT8401的Datasheet PDF文件第4页浏览型号AAT8401的Datasheet PDF文件第5页浏览型号AAT8401的Datasheet PDF文件第6页  
20V P-Channel Power MOSFET
General Description
The AAT8401 is a low threshold MOSFET designed
for the battery, cell phone, and PDA markets. Using
AnalogicTech™’s ultra high density proprietary
TrenchDMOS™ technology, this product demon-
strates high power handling and small size.
AAT8401
Features
V
DS(MAX)
= -20V
I
D(MAX)
1
= -2.4A @ 25°C
Low R
DS(ON)
:
• 100 mΩ @ V
GS
= -4.5V
• 175 mΩ @ V
GS
= -2.5V
Applications
Battery Packs
Cellular & Cordless Telephones
Battery-powered portable equipment
SC59 Package
Top View
D
3
Preliminary Information
1
G
2
S
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
STG
(T
A
=25°C unless otherwise noted)
Value
-20
±12
±2.4
±2.0
±9
-0.9
1.0
0.6
-55 to 150
Description
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
J
=150°C
1
Units
V
T
A
= 25°C
T
A
= 70°C
1
Pulsed Drain Current
2
Continuous Source Current (Source-Drain Diode)
Maximum Power Dissipation
1
A
T
A
= 25°C
T
A
= 70°C
W
°C
Operating Junction and Storage Temperature Range
Thermal Characteristics
Symbol
R
θJA
R
θJA2
R
θJF
Description
Typical Junction-to-Ambient steady state
1
Maximum Junction-to-Ambient t<5 seconds
Typical Junction-to-Foot
1
1
Value
145
125
50
Units
°C/W
°C/W
°C/W
8401.2003.06.0.61
1