AAT8543
20V P-Channel Power MOSFET
General Description
The AAT8543 is a low threshold P-channel MOSFET
designed for the battery, cell phone, and PDA mar-
kets. Using AnalogicTech's ultra-high-density MOS-
FET process and space-saving, small-outline, J-lead
package, performance superior to that normally
found in a TSOP-6 footprint has been squeezed into
the footprint of an SC70JW-8 package.
Features
•
•
•
Drain-Source Voltage (max): -20V
Continuous Drain Current
1
(max):
-4.2A @ 25°C
Low On-Resistance:
— 57mΩ @ V
GS
= -4.5V
— 104mΩ @ V
GS
= -2.5V
Applications
•
•
•
Battery Packs
Battery-Powered Portable Equipment
Cellular and Cordless Telephones
SC70JW-8 Package
Top View
D
8
D
7
D
6
D
5
Absolute Maximum Ratings
T
A
= 25°C, unless otherwise noted.
Symbol
V
DS
V
GS
I
D
I
DM
I
S
T
J
T
STG
1
S
2
S
3
S
4
G
Description
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
J
= 150°C
1
Pulsed Drain Current
2
Continuous Source Current (Source-Drain Diode)
1
Operating Junction Temperature Range
Storage Temperature Range
T
A
= 25°C
T
A
= 70°C
Value
-20
±12
±4.2
±3.3
±20
-1.2
-55 to 150
-55 to 150
Units
V
A
°C
°C
Thermal Characteristics
1
Symbol
R
θJA
R
θJA2
R
θJF
P
D
Description
Typical Junction-to-Ambient Steady State
Maximum Junction-to-Ambient t<5 Seconds
Typical Junction-to-Foot
T
A
= 25°C
Maximum Power Dissipation
T
A
= 70°C
Typ
100
62
35
Max
124
76
42
1.6
1.0
Units
°C/W
°C/W
°C/W
W
1. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a
1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. R
θJF
+ R
θFA
= R
θJA
where the
foot thermal reference is defined as the normal solder mounting surface of the device's leads. R
θJF
is guaranteed by design; howev-
er, R
θCA
is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
2. Pulse test: Pulse Width = 300µs.
8543.2005.04.1.0
1