30V N-Channel Power MOSFET
General Description
The AAT9060 30V N-Channel Power MOSFET is a
member of AnalogicTech™'s TrenchDMOS™
product family. Using the ultra-high density propri-
etary TrenchDMOS technology, this product
demonstrates high power handling and small size.
AAT9060
Features
•
•
•
•
PWMSwitch
™
V
DS(MAX)
= 30V
I
D(MAX)
1
= 39A @ T
C
= 25°C
I
APP(MAX)
= 12.5A in typical computer application
Low R
DS(ON)
:
• 16 mΩ @V
GS
= 10V
• 27 mΩ @V
GS
= 4.5V
Applications
•
•
•
DC-DC converters
High current load switches
LDO output
DPAK Package
Drain-Connected Tab
Preliminary Information
G
S
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
STG
(T
C
=25°C unless otherwise noted)
Value
30
±20
±39
±31
±60
20
41
26
-55 to 150
Description
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
J
=150°C
1
Units
V
T
C
= 25°C
T
C
= 70°C
Pulsed Drain Current
3
Continuous Source Current (Source-Drain Diode)
1
T
C
= 25°C
Maximum Power Dissipation
1
T
C
= 70°C
Operating Junction and Storage Temperature Range
A
W
°C
Thermal Characteristics
Symbol
R
θJA
R
TYP
R
θJC
Description
Maximum Junction-to-Ambient
Typical Junction to ambient on PC board
Maximum Junction-to-Case
2
Value
96
24
3
Units
°C/W
°C/W
°C/W
9060.2003.05.0.9
1
ANALOGICTECH [ ADVANCED ANALOGIC TECHNOLOGIES ]
