AAT9125
30V N-Channel Power MOSFET
General Description
The AAT9125 30V N-Channel Power MOSFET is a
member of AnalogicTech's TrenchDMOS™ prod-
uct family. Using the ultra-high density proprietary
TrenchDMOS technology, this product demon-
strates high power handling and small size.
Features
•
•
•
PWMSwitch
™
V
DS(MAX)
= 30V
I
D(MAX)
= 12.5A @ 25°C
Low R
DS(ON)
:
• 9 mΩ @V
GS
= 10V
• 14 mΩ @ V
GS
= 4.5V
Applications
•
•
•
•
DC-DC converters for mobile CPUs
Battery-powered portable equipment
High power density switch-mode supplies
Point-of-use Power Supplies
SOP8 Package
Preliminary Information
Top View
D
8
D
7
D
6
D
5
1
S
2
S
3
S
4
G
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
STG
(T
A
=25°C unless otherwise noted)
Value
30
±20
±12.5
±10
±52
2.25
2.5
1.6
-55 to 150
Description
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
J
=150°C
1
Units
V
T
A
= 25°C
T
A
= 70°C
Pulsed Drain Current
Continuous Source Current (Source-Drain Diode)
1
T
A
= 25°C
Maximum Power Dissipation
1
T
A
= 70°C
Operating Junction and Storage Temperature Range
A
W
°C
Thermal Characteristics
Symbol
R
θJA
R
θJC
Description
Typical Junction-to-Ambient
Typical Junction-to-Case
1
Value
50
25
Units
°C/W
°C/W
Note 1: Mounted on 1” x 1” FR4 Copper Board, 10 sec pulse width
9125.2001.12.0.9
1
ANALOGICTECH [ ADVANCED ANALOGIC TECHNOLOGIES ]
