AHK6030LX
30V N-Channel Power MOSFET
General Description
Utilizing
Analogic
Tech’s
state-of-the-art
â
TrenchDMOS process, the AHK6030LX sets a
new standard in current handling capability and
efficiency for surface mount power MOSFETs.
Gate charge and R
DS(ON)
have been optimized and
package inductance minimized to provide high
efficiency for DC-DC.
Features
•=
•=
•=
•=
•=
PWMSwitch
TM
V
DS(MAX)
= 30V
I
D(MAX)(a)
= 52 A @ 25
°
C
I
APP(MAX)
= 20A in typical computer application
Low Gate Charge
Low R
DS(ON)
:
10.5 m
Ω=
(max), 9.5 m
Ω=
(typ)@V
GS
= 10V
18 m
Ω=
(max), 14 m
Ω=
(typ)@ V
GS
= 4.5V
Applications
•=
DC-DC converters for CPU’s
•=
High Current Load Switch
DPAK-L Package
Drain-Connected Tab
DPAK Package
Preliminary Information
Drain-Connected Tab
G
S
G
S
Absolute Maximum Ratings
(T
A
=25
°
C unless otherwise noted)
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
STG
Description
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
J
=150
°
C
(a)
Pulsed Drain Current
(a)
Continuous Source Current (Source-Drain Diode)
(a)
Maximum Power Dissipation
(a)
Operating Junction and Storage Temperature Range
T
A
= 25
°
C
T
A
= 70
°
C
Value
30
±
20
±
52
±
56
23
42
27
-55 to 150
Units
V
A
W
°
C
Thermal Resistance
R
θJA
R
θJC
Maximum Junction-to-Ambient
(a)
Maximum Junction-to-Case
(a)
96
3.6
°
C/W
°
C/W
Advanced Analogic Technologies, Inc.
1250 Oakmead Pkwy, Suite 310, Sunnyvale, CA 94086
(408)524-9684 Fax (408)524-9689
9-19
6030LX.2001.05.0.91
ANALOGICTECH [ ADVANCED ANALOGIC TECHNOLOGIES ]
