Analog Power
N-Channel 60-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r
DS(on)
and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
•
•
•
•
Low r
DS(on)
provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
S1
SC70-6 saves board space
G1
Fast switching speed
D2
High performance trench technology
AM1960NE
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(Ω)
2.0 @ V
GS
= 4.5V
60
3.0 @ V
GS
= 2.5V
SC70-6
Top View
1
2
3
6
5
4
D1
G2
S2
G
1
D
1
G
2
I
D
(A)
0.32
0.26
D
2
N-Channel MOSFET N-Channel MOSFET
S
1
S
2
ESD Protected
2000V
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
o
C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
b
a
a
Symbol
V
DS
V
GS
T
A
=25 C
T
A
=70 C
o
o
Maximum Units
60
V
20
0.32
0.26
0.7
0.25
0.3
0.21
-55 to 150
A
W
o
I
D
I
DM
I
S
A
Continuous Source Current (Diode Conduction)
Power Dissipation
a
T
A
=25 C
T
A
=70 C
o
o
P
D
T
J
, T
stg
Operating Junction and Storage Temperature Range
C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Symbol
R
THJA
Maximum Units
415
460
o
t <= 5 sec
Steady-State
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
PRELIMINARY
Publication Order Number:
DS-AM1960NE_A
ANALOGPOWER [ ANALOG POWER ]
