Analog Power
N-Channel 100-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r
DS(on)
and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
•
•
•
•
Low r
DS(on)
provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
DPAK saves board space
Fast switching speed
High performance trench technology
AM20N10-250D
PRO
DUCT SUM A
M RY
V (V
)
r
DS(on)
m
(Ω)
DS
280 @ V
S
= 10V
G
100
355 @ V
S
= 4.5V
G
I
D
(A
)
11
10
ABSOLUTE MAX
IMUM RATING (T
A
= 25 C UNLESS OTHERW
S
ISE NOTED)
Sym
bol
Lim
it Units
Param
eter
100
V
DS
Drain-Source Voltage
V
V
GS
G
ate-Source Voltage
±20
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
a
b
a
a
o
T
C
=25 C I
D
o
11
36
30
50
I
DM
I
S
o
T
C
=25 C P
D
A
A
W
o
Continuous Source Current (Diode Conduction)
Operating Junction and Storage Tem
perature Range
T
J
, T
stg
-55 to 175
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient
a
Maximum Junction-to-Case
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
Maximum
50
3.0
Units
o
R
θJA
R
θJC
C/W
o
C/W
1
PRELIMINARY
Publication Order Number:
DS-AM20N10-250_C
ANALOGPOWER [ ANALOG POWER ]
