Analog Power
P-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize
High Cell Density process. Low r
DS(on)
assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are PWMDC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.
•
•
•
•
Low r
DS(on)
Provides Higher Efficiency and
Extends Battery Life
Miniature TO-251 Surface Mount Package
Saves Board Space
High power and current handling capability
Extended VGS range (±25) for battery pack
applications
AM20P03-60I
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
m(Ω)
59 @ V
GS
= -10V
-30
95 @ V
GS
= -4.5V
I
D
(A)
24
19
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Symbol Maximum Units
Parameter
Drain-Source Voltage
-30
V
DS
V
Gate-Source Voltage
±25
V
GS
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
a
b
a
a
o
T
A
=25 C I
D
o
24
±40
-30
50
I
DM
I
S
o
T
A
=25 C P
D
A
A
W
o
Continuous Source Current (Diode Conduction)
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 175
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient
a
Maximum Junction-to-Case
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
Maximum
50
3.0
Units
o
R
θJA
R
θJC
C/W
o
C/W
1
January, 2005 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM20P03-60I_C
ANALOGPOWER [ ANALOG POWER ]
