Analog Power
P - Channel Logic Level MOSFET
These miniature surface mount MOSFETs
utilize High Cell Density process. Low
r
DS(on)
assures minimal power loss and
conserves energy, making this device ideal
for use in power management circuitry.
Typical applications are voltage control
small signal switch, power management in
portable and battery-powered products and
most low current high side switch.
•
•
•
•
•
Low r
DS(on)
Provides Higher Efficiency and
Extends Battery Life
Fast Switch
Low Gate Charge
High Saturation Current
Miniature SOT-23 Surface Mount Package
Saves Board Space
o
AM2313P
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(Ω)
10 @ V
GS
= -10 V
-60
20 @ V
GS
= -4.5V
I
D
(A)
-0.2
-0.12
G
D
S
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Symbol Maximum Units
Parameter
-60
Drain-Source Voltage
V
DS
V
V
GS
±20
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
b
a
a
T
A
=25 C
T
A
=70 C
o
o
I
D
I
DM
I
S
±0.12
±0.09
±1
0.24
0.36
0.29
-55 to 150
A
W
o
A
Continuous Source Current (Diode Conduction)
Power Dissipation
a
T
A
=25 C
T
A
=70 C
o
o
P
D
T
J
, T
stg
Operating Junction and Storage Temperature Range
C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Symbol
R
T HJA
Maximum Units
350
400
o
t <= 5 sec
Steady-State
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
July, 2002 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM2313_B
ANALOGPOWER [ ANALOG POWER ]
