Analog Power
P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low r
DS(on)
and to ensure minimal
power loss and heat dissipation. Typical
applications are DC-DC converters and
power management in portable and
battery-powered products such as
computers, printers, PCMCIA cards,
cellular and cordless telephones.
•
•
•
•
Low r
DS(on)
provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
SOT-23 saves board space
Fast switching speed
High performance trench technology
AM2325P
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(OHM)
0.055 @ V
GS
= -4.5V
-20
0.089 @ V
GS
= -2.5V
0.20 @ V
GS
= -1.8V
I
D
(A)
-3.6
-2.8
-1.8
G
D
S
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
o
C UNLESS OTHERWISE NOTED)
Parameter
Symbol Ratings
Drain-Source Voltage
-20
V
DS
Gate-Source Voltage
±12
V
GS
Continuous Drain Current
Pulsed Drain Current
b
Continuous Source Current (Diode Conduction)
a
Power Dissipation
a
a
Units
V
T
A
=25
o
C
T
A
=70
o
C
I
D
I
DM
I
S
-3.6
-2.9
-10
±0.46
1.25
0.8
-55 to 150
A
W
o
A
T
A
=25
o
C
T
A
=70
o
C
P
D
T
J
, T
stg
Operating Junction and Storage Temperature Range
C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
t <= 5 sec
Steady-State
Symbol
R
THJA
Maximum
100
166
Units
o
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
Publication Order Number:
DS-AM2325_J
ANALOGPOWER [ ANALOG POWER ]
