Analog Power
N-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs
utilize High Cell Density process. Low
r
DS(on)
assures minimal power loss and
conserves energy, making this device ideal
for use in power management circuitry.
Typical applications are DC-DC
converters, power management in portable
and battery-powered products such as
computers, printers, PCMCIA cards,
cellular and cordless telephones.
•
•
Low r
DS(on)
Provides Higher Efficiency and
Extends Battery Life
Miniature SOT-23 Surface Mount Package
Saves Board Space
AM2326N
0.120@ V
GS
= 1.8V
8-
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(Ω)
0.070 @ V
GS
= 4.5V
20
0.080@ V
GS
= 2.5V
ed
G
I
D
(A)
2.2
2.0
1.8
1.
V
R
at
D
S
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol Maximum Units
Drain-Source Voltage
V
DS
20
V
Gate-Source Voltage
±8
V
GS
Continuous Drain Current
Pulsed Drain Current
b
a
a
o
T
A
=25 C
T
A
=70 C
o
o
I
D
I
DM
I
S
2.2
1.8
8
0.6
1.25
0.8
-55 to 150
A
W
o
A
Continuous Source Current (Diode Conduction)
Power Dissipation
a
T
A
=25 C
T
A
=70 C
o
o
P
D
T
J
, T
stg
Operating Junction and Storage Temperature Range
C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Symbol Maximum
R
THJA
100
166
Units
o
t <= 5 sec
Steady-State
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
July, 2002 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM2326_C