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AM2328NE 参数 Datasheet PDF下载

AM2328NE图片预览
型号: AM2328NE
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道20V (D -S )的MOSFET [N-Channel 20V (D-S) MOSFET]
分类和应用:
文件页数/大小: 3 页 / 90 K
品牌: ANALOGPOWER [ ANALOG POWER ]
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Analog Power
N-Channel 20V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r
DS(on)
and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
AM2328NE
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
0.018 @ V
GS
= 4.5 V
20
0.021 @ V
GS
= 2.5V
SOT-23
Top View
G
I
D
(A)
7.0
6.5
D
Low r
DS(on)
provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
SOT-23 saves board space
Fast switching speed
High performance trench technology
G
D
S
S
N-Channel
MOSFET
ESD Protected
2000V
o
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol Maximum Units
Drain-Source Voltage
V
DS
20
V
±8
Gate-Source Voltage
V
GS
Continuous Drain Current
Pulsed Drain Current
b
a
a
T
A
=25 C
T
A
=70 C
o
o
I
D
I
DM
I
S
7.0
5.7
±20
1.6
1.3
0.9
A
W
o
A
Continuous Source Current (Diode Conduction)
Power Dissipation
a
T
A
=25 C
T
A
=70 C
o
o
P
D
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Symbol
R
T HJA
Maximum Units
100
166
o
t <= 5 sec
Steady-State
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
PRELIMINARY
Publication Order Number:
DS-AM2328NE_B