Analog Power
N-Channel 40-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r
DS(on)
and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
•
•
•
•
Low r
DS(on)
provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
SOT-23 saves board space
Fast switching speed
High performance trench technology
AM2342N
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
m(O)
86 @ V
S
= 10V
G
40
128 @ V
S
= 4.5V
G
I
D
(A)
5.2
3.7
G
D
S
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
o
C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Units
Drain-Source Voltage
V
DS
40
V
Gate-Source Voltage
V
GS
±20
Continuous Drain Current
Pulsed Drain Current
b
Continuous Source Current (Diode Conduction)
a
Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
=25
o
C
T
A
=70 C
o
a
T
A
=25
o
C
T
A
=70
o
C
I
D
I
DM
I
S
P
D
T
J
, T
stg
5.2
4.1
30
1.6
1.3
0.8
-55 to 150
o
A
A
W
C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Symbol
t <= 5 sec
R
?JA
Maximum
100
166
Units
o
o
Steady-State
C/W
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
PRELIMINARY
Publication Order Number:
DS-AM2342_A
ANALOGPOWER [ ANALOG POWER ]
