Analog Power
P - Channel 40V (D-S) MOSFET
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low r
DS(on)
and to ensure minimal
power loss and heat dissipation. Typical
applications are DC-DC converters and
power management in portable and
battery-powered products such as
computers, printers, PCMCIA cards,
cellular and cordless telephones.
•
•
•
•
Low r
DS(on)
provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
SOT-23 saves board space
Fast switching speed
High performance trench technology
ESD
AM2345PE
PRO
DUCT SUM A
M RY
V (V
)
r
DS(on)
(Ω)
DS
0.164 @ V
S
= -10 V
G
-40
0.260 @ V
S
= -4.5V
G
SOT-23
Top View
G
D
S
G
I
D
(A
)
-3.2
-2.6
S
Protected
2000V
o
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Symbol Ratings Units
Parameter
V
DS
-40
Drain-Source Voltage
V
V
GS
±20
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
b
a
a
T
A
=25 C
T
A
=70 C
o
o
I
D
I
DM
I
S
± 3.2
± 2.7
±10
0.4
1.25
0.8
-55 to 150
A
W
o
A
Continuous Source Current (Diode Conduction)
Power Dissipation
a
T
A
=25 C
T
A
=70 C
o
o
P
D
T
J
, T
stg
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
C
Symbol
R
T HJA
Maximum Units
100
150
o
t <= 5 sec
Steady-State
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
PRELIMINARY
Publication Order Number:
DS-AM2345PE_A
ANALOGPOWER [ ANALOG POWER ]
