Analog Power
N-Channel 60V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r
DS(on)
and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
•
•
•
•
Low r
DS(on)
provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
SOT-23 saves board space
Fast switching speed
High performance trench technology
AM2358NE
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(Ω)
0.092 @ V
GS
= 10 V
60
0.107 @ V
GS
= 4.5V
SOT-23
Top View
G
D
G
I
D
(A)
3.1
2.9
D
ESD Protected
2000V
o
S
S
N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Symbol Maximum Units
Parameter
60
Drain-Source Voltage
V
DS
V
V
GS
±20
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
b
a
a
T
A
=25 C
T
A
=70 C
o
o
I
D
I
DM
I
S
2.8
1.8
±15
1.7
1.3
0.8
A
W
o
A
Continuous Source Current (Diode Conduction)
Power Dissipation
a
T
A
=25 C
T
A
=70 C
o
o
P
D
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Symbol Maximum Units
R
THJA
100
166
o
t <= 5 sec
Steady-State
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
PRELIMINARY
Publication Order Number:
DS-AM2358NE_A
ANALOGPOWER [ ANALOG POWER ]
