Analog Power
N-Channel 60V (D-S) MOSFET
These miniature surface mount MOSFETs
utilize High Cell Density process. Low r
DS(on)
assures minimal power loss and conserves
energy, making this device ideal for use in
power management circuitry. Typical
applications are power switch, power
management in portable and battery-powered
products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
•
•
•
•
Low r
DS(on)
Provides Higher Efficiency and
Extends Battery Life
Low Gate Charge
Fast Switch
Miniature SOT-23 Surface Mount Package
Saves Board Space
AM2398N
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(Ω)
0.194 @ V
GS
= 10 V
60
0.273 @ V
GS
= 4.5V
I
D
(A)
2.2
1.8
G
D
S
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Symbol Maximum Units
Parameter
60
Drain-Source Voltage
V
DS
V
V
GS
±20
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
b
a
a
o
T
A
=25 C
T
A
=70 C
o
o
I
D
I
DM
I
S
2.2
1.7
±15
1.7
1.3
0.8
A
W
o
A
Continuous Source Current (Diode Conduction)
Power Dissipation
a
T
A
=25 C
T
A
=70 C
o
o
P
D
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Symbol Maximum Units
R
THJA
100
166
o
t <= 5 sec
Steady-State
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
April, 2004 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM2398_B
ANALOGPOWER [ ANALOG POWER ]
