Analog Power
AM30N20-400PCFM
N-Channel 200-V (D-S) MOSFET
Key Features:
• Low r
DS(on)
trench technology
• Low thermal impedance
• Fast switching speed
Typical Applications:
• PoE Power Sourcing Equipment
• PoE Powered Devices
• Telecom DC/DC converters
• White LED boost converters
PRODUCT SUMMARY
r
DS(on)
(mΩ)
V
DS
(V)
400 @ V
GS
= 10V
200
450 @ V
GS
= 5.5V
I
D
(A)
9
8.5
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
V
DS
Drain-Source Voltage
200
V
GS
Gate-Source Voltage
±20
T
C
=25°C
I
D
Continuous Drain Current
9
a
I
DM
50
Pulsed Drain Current
I
S
Continuous Source Current (Diode Conduction)
50
T
C
=25°C
P
D
Power Dissipation
60
T
J
, T
stg
-55 to 175
Operating Junction and Storage Temperature Range
Units
V
A
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case
Symbol Maximum
R
θJA
62.5
R
θJC
2.5
Units
°C/W
Notes
a.
Pulse width limited by maximum junction temperature
© Preliminary
1
Publication Order Number:
DS-AM30N20-400PCFM-1A
ANALOGPOWER [ ANALOG POWER ]
