Analog Power
N-Channel 30V (D-S) MOSFET
These miniature surface mount MOSFETs
utilize High Cell Density process. Low r
DS(on)
assures minimal power loss and conserves
energy, making this device ideal for use in
power management circuitry. Typical
applications are power switch, power
management in portable and battery-powered
products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
•
•
•
•
Low r
DS(on)
Provides Higher Efficiency and
Extends Battery Life
Low Gate Charge
Fast Switch
Miniature TSOP-6 Surface Mount Package
Saves Board Space
AM3406N
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(Ω)
0.032 @ V
GS
= 10 V
30
0.044 @ V
GS
= 4.5V
I
D
(A)
6.3
5.4
1
2
3
6
5
4
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
o
C UNLESS OTHERWISE NOTED)
Symbol Maximum Units
Parameter
30
V
DS
Drain-Source Voltage
V
V
GS
±20
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
b
Continuous Source Current (Diode Conduction)
a
Power Dissipation
a
a
T
A
=25
o
C
T
A
=70
o
C
I
D
I
DM
I
S
6.3
5.1
±30
1.7
2.0
1.3
-55 to 150
A
W
o
A
T
A
=25
o
C
T
A
=70 C
o
P
D
T
J
, T
stg
Operating Junction and Storage Temperature Range
C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
t <= 5 sec
Steady-State
Symbol
R
THJA
Maximum Units
62.5
110
o
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
April, 2004 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM3406_A
ANALOGPOWER [ ANALOG POWER ]
