Analog Power
N-Channel Logic Level MOSFET
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low r
DS(on)
and to ensure minimal
power loss and heat dissipation. Typical
applications are DC-DC converters and power
management in portable and battery-powered
products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
AM3438NE
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
0.027 @ V
GS
= 10 V
30
0.04 @ V
GS
= 4.5V
I
D
(A)
6.3
5.5
1
6
5
4
•
•
•
•
Low r
DS(on)
provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
TSOP-6 saves board space
Fast switching speed
High performance trench technology
2
3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol Maximum Units
Drain-Source Voltage
V
DS
30
V
±20
Gate-Source Voltage
V
GS
Continuous Drain Current
Pulsed Drain Current
b
a
a
o
T
A
=25 C
T
A
=70 C
o
o
I
D
I
DM
I
S
6.3
5.2
±20
1.3
1.6
1.0
A
W
o
A
Continuous Source Current (Diode Conduction)
Power Dissipation
a
T
A
=25 C
T
A
=70 C
o
o
P
D
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Symbol
R
T HJA
Maximum Units
78.0
o
t <= 5 sec
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
PRELIMINARY
Publication Order Number:
DS-AM3438NE_B
ANALOGPOWER [ ANALOG POWER ]
