Analog Power
P-Channel 40-V (D-S) MOSFET
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low r
DS(on)
and to ensure minimal
power loss and heat dissipation. Typical
applications are DC-DC converters and
power management in portable and
battery-powered products such as
computers, printers, PCMCIA cards,
cellular and cordless telephones.
•
•
•
•
Low r
DS(on)
provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
TSOP-6 saves board space
Fast switching speed
High performance trench technology
AM3447P
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(Ω)
0.070 @ V
GS
= -10V
-40
0.090 @ V
GS
= -4.5V
I
D
(A)
-4.4
-3.9
1
2
3
6
5
4
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
o
C UNLESS OTHERWISE NOTED)
Parameter
Symbol Maximum Units
Drain-Source Voltage
V
DS
-40
V
Gate-Source Voltage
±20
V
GS
Continuous Drain Current
Pulsed Drain Current
b
Continuous Source Current (Diode Conduction)
a
Power Dissipation
a
a
T
A
=25
o
C
T
A
=70
o
C
I
D
I
DM
I
S
-4.0
-3.2
±20
-1.7
2.0
1.3
-55 to 150
A
W
o
A
T
A
=25
o
C
T
A
=70 C
o
P
D
T
J
, T
stg
Operating Junction and Storage Temperature Range
C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Symbol
R
THJA
Maximum Units
62.5
110
o
t <= 5 sec
Steady state
C/W
o
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
PRELIMINARY
Publication Order Number:
DS-AM3447_A
ANALOGPOWER [ ANALOG POWER ]
