Analog Power
N-Channel 30V (D-S) MOSFET
These miniature surface mount MOSFETs
utilize High Cell Density process. Low r
DS(on)
assures minimal power loss and conserves
energy, making this device ideal for use in
power management circuitry. Typical
applications are power switch, power
management in portable and battery-powered
products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
•
•
•
•
Low r
DS(on)
Provides Higher Efficiency and
Extends Battery Life
Low Gate Charge
Fast Switch
Miniature TSOP-6 Surface Mount Package
Saves Board Space
AM3456N
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(Ω)
0.044 @ V
GS
= 10 V
30
0.064 @ V
GS
= 4.5V
I
D
(A)
5.1
4.5
1
2
3
6
5
4
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol Maximum Units
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
±20
V
GS
Continuous Drain Current
Pulsed Drain Current
b
a
a
o
T
A
=25 C
T
A
=70 C
o
o
I
D
I
DM
I
S
5.5
4.4
±20
1.3
2.0
1.3
A
W
o
A
Continuous Source Current (Diode Conduction)
Power Dissipation
a
T
A
=25 C
T
A
=70 C
o
o
P
D
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Symbol
R
T HJA
Maximum Units
85
62.5
o
t <= 5 sec
Steady-State
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
November, 2003 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM3456_B
ANALOGPOWER [ ANALOG POWER ]
