Analog Power
P-Channel 60-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize
High Cell Density process. Low r
DS(on)
assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are PWMDC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.
•
•
•
•
Low r
DS(on)
Provides Higher Efficiency and
Extends Battery Life
Miniature SO-8 Surface Mount Package
Saves Board Space
High power and current handling capability
Extended VGS range (±25) for battery pack
applications
AM3459P
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(Ω)
0.310 @ V
GS
= -10V
-60
0.465 @ V
GS
= -4.5V
I
D
(A)
2.1
1.7
1
2
3
6
5
4
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Symbol Maximum Units
Parameter
-60
Drain-Source Voltage
V
DS
V
V
GS
±20
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
b
a
a
o
T
A
=25 C
T
A
=70 C
o
o
I
D
I
DM
I
S
2.1
1.7
±15
-1.7
2.0
1.3
A
W
o
A
Continuous Source Current (Diode Conduction)
Power Dissipation
a
T
A
=25 C
T
A
=70 C
o
o
P
D
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Symbol
R
θJA
t <= 5 sec
Maximum
62.5
110
Units
o
o
C/W
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
September, 2003 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM3459_A
ANALOGPOWER [ ANALOG POWER ]
