Analog Power
N-Channel 100V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r
DS(on)
and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
•
•
•
•
Low r
DS(on)
provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
TSOP-6 saves board space
Fast switching speed
High performance trench technology
AM3470N
PRO
DUCT SUM A
M RY
V (V
)
r
DS(on)
(Ω)
DS
0.280 @ V
S
= 10 V
G
100
0.355 @ V
S
= 5.5V
G
TSOP-6
Top View
D
D
G
1
2
3
6
5
4
D
D
S
G
1
I
D
(A
)
2.2
2.0
D
1
S
1
N-Channel MOSFET
ABSOLUTE MAX
IMUM RATING (T
A
= 25 C UNLESS OTHERW
S
ISE NOTED)
Sym
bol Maxim
um Units
Param
eter
100
V
DS
Drain-Source Voltage
V
V
GS
G
ate-Source Voltage
±20
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
a
b
a
a
o
T
A
=25 C I
D
o
2.2
±10
1.1
2.0
I
DM
I
S
o
T
A
=25 C P
D
A
A
W
o
Continuous Source Current (Diode Conduction)
Operating Junction and Storage Tem
perature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
t <= 10 sec
Steady State
Symbol
R
thJA
Typ
93
130
Max
110
150
o
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
PRELIMINARY
Publication Order Number:
DS-AM3470_C
ANALOGPOWER [ ANALOG POWER ]
