Analog Power
N-Channel 20-V (D-S) MOSFET With Schottky Diode
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r
DS(on)
and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
•
•
•
•
Low r
DS(on)
provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
TSOP-6 saves board space
Fast switching speed
High performance trench technology
AM3826N
M SF T P
O E
RO
DU T SU M RY
C
M A
V
S
(V
)
r
S(on)
(O M
H )
I
D
(A
)
D
D
±4.1
0.047 @ V
S
= -4.5V
G
20
±3.8
0.055 @ V
S
= -2.5V
G
SC O T YP
H T K
RO
DU T SU M RY
C
M A
V (V
)
f
V
A
(V
)
I
F
(A
)
K
Diod F w d V
e or ar
oltage
20
0.48V @ 1.0A
1.0
TSOP-6
Top View
A
S
G
1
2
3
6
5
4
K
N/C
D
S
N-Channel MOSFET
D
K
G
A
ISE NOTED)
A
BSOLUTE MA
XIMUM RA
TINGS (T
A
= 25 C UNLESS OTHERW
Sym
bol Maxim
um Units
Param
eter
V
DS
20
Drain-Source Voltage (M
OSFET)
V
Reverse Voltage (Schottky)
20
V
KA
G
ate-Source Voltage (M
OSFET)
±8
V
GS
Continuous Drain Current (T
J
=150 C) (M
OSFET)
Pulsed Drain Current (M
OSFET)
b
a
o
a
o
T
A
=25 C
T
A
=70 C
o
o
I
D
I
DM
I
S
I
F
I
FM
±4.1
±3.3
±8
1.05
0.5
8
1.15
0.7
1.0
0.6
A
Continuous Source Current (M
OSFET Diode Conduction)
Average Forward Current (Schottky)
Pulsed Forward Current (Schottky)
M
axim Power Dissipation (M
um
OSFET)
M
axim Power Dissipation (Schottky)
um
a
a
T
A
=25 C
T
A
=70 C
T
A
=25 C
T
A
=70 C
o
o
o
o
P
D
W
Operating Junction and Storage Tem
perature Range
T
J
, T
stg
-55 to 150
o
C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
t <= 10 sec
Steady State
Symbol
R
thJA
Typ
93
130
Max
110
150
o
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
PRELIMINARY
Publication Order Number:
DS-AM3826_A
ANALOGPOWER [ ANALOG POWER ]
