Analog Power
N-Channel 30-V (D-S) MOSFET With Schottky Diode
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r
DS(on)
and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
•
•
•
•
Low r
DS(on)
provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
TSOP-6 saves board space
Fast switching speed
High performance trench technology
AM3836N
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
m(Ω)
63 @ V
GS
= 4.5V
30
110 @ V
GS
= 2.5V
I
D
(A)
3.5
3.0
SCHOTTKY PRODUCT SUMMARY
V
f
(V)
V
KA
(V)
I
F
(A)
Diode Forward Voltage
30
0.48V @ 1.0A
1.0
TSOP-6
Top View
A
S
G
1
2
3
6
5
4
K
G
N/C
D
S
N-Channel MOSFET
D
K
A
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
o
C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
V
DS
30
Drain-Source Voltage (MOSFET)
30
Reverse Voltage (Schottky)
V
KA
±12
Gate-Source Voltage (MOSFET)
V
GS
Continuous Drain Current (T
J
=150 C) (MOSFET)
Pulsed Drain Current (MOSFET)
b
Continuous Source Current (MOSFET Diode Conduction)
Average Forward Current (Schottky)
Pulsed Forward Current (Schottky)
Maximum Power Dissipation (MOSFET)
Maximum Power Dissipation (Schottky)
a
Operating Junction and Storage Temperature Range
a
a
o
a
Units
V
T
A
=25
o
C
T
A
=70
o
C
I
D
I
DM
I
S
I
F
I
FM
± 3.5
± 2.8
± 16
1.25
0.5
8
1.3
0.8
1.0
0.6
W
A
T
A
=25
o
C
T
A
=70
o
C
T
A
=25
o
C
T
A
=70
o
C
P
D
T
J
, T
stg
-55 to 150
o
C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Symbol
R
θJA
Maximum
100
166
Units
o
t <= 10 sec
Steady-State
C/W
o
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
PRELIMINARY
Publication Order Number:
DS-AM3836_A
ANALOGPOWER [ ANALOG POWER ]
