Analog Power
Dual N-Channel Logical Level MOSFET
These miniature surface mount MOSFETs utilize
High Cell Density process. Low r
DS(on)
assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are DC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
•
Low r
DS(on)
Provides Higher Efficiency and
Extends Battery Life
•
Miniature TSOP-6 Surface Mount Package
Saves Board Space
•
Very fast switching
•
Lower gate charge (2.2 nC)
AM3906N
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(OHM)
0.099 @ V
GS
= 10 V
30
0.142 @ V
GS
= 4.5V
I
D
(A)
2.5
2.0
1
2
3
6
5
4
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Symbol Maximum Units
Parameter
Drain-Source Voltage
30
V
DS
V
Gate-Source Voltage
±20
V
GS
Continuous Drain Current
Pulsed Drain Current
b
a
a
o
T
A
=25 C
T
A
=70 C
o
o
I
D
I
DM
I
S
2.5
2
10
±0.8
0.95
0.7
A
W
o
A
Continuous Source Current (Diode Conduction)
Power Dissipation
a
T
A
=25 C
T
A
=70 C
o
o
P
D
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
t <= 5 sec
Steady-State
Symbol Maximum Units
R
ΤΗ
JA
130
176
o
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
July, 2002 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM3906_A
ANALOGPOWER [ ANALOG POWER ]
