Analog Power
N-Channel 60-V (D-S) MOSFET
These miniature surface mount MOSFETs
utilize High Cell Density process. Low
r
DS(on)
assures minimal power loss and
conserves energy, making this device ideal
for use in power management circuitry.
Typical applications are DC-DC
converters, power management in portable
and battery-powered products such as
computers, printers, PCMCIA cards,
cellular and cordless telephones.
•
•
•
Low r
DS(on)
Provides Higher Efficiency
and Extends Battery Life
Miniature TSOP-6 Surface Mount Package
Saves Board Space
AM3962N
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(Ω)
0.153 @ V
GS
= 10V
60
0.185 @ V
GS
= 4.5V
I
D
(A)
2.3
2.1
1
2
3
6
5
4
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
o
C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
b
Continuous Source Current (Diode Conduction)
a
Power Dissipation
a
a
Symbol
V
DS
V
GS
T
A
=25
o
C
T
A
=70
o
C
I
D
I
DM
I
S
o
Limit
60
±20
2.3
1.9
8
1.05
1.15
0.7
Units
V
A
A
W
o
T
A
=25
o
C
T
A
=70 C
P
D
T
J
, T
stg
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
-55 to 150
C
Symbol
R
θJA
Maximum
100
166
Units
o
o
t <= 10 sec
Steady-State
C/W
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
May, 2005 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM3962_A