Analog Power
Dual N-Channel Logical Level MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r
DS(on)
and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
•
•
•
•
Low r
DS(on)
provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
TSOP-6 saves board space
Fast switching speed
High performance trench technology
AM3998N
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(OHM)
0.058 @ V
GS
= 4.5 V
20
0.082 @ V
GS
= 2.5V
I
D
(A)
3.7
3.1
1
2
3
6
5
4
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
o
C UNLESS OTHERWISE NOTED)
Parameter
Symbol Maximum Units
Drain-Source Voltage
20
V
DS
V
Gate-Source Voltage
V
GS
±12
Continuous Drain Current
Pulsed Drain Current
b
Continuous Source Current (Diode Conduction)
a
Power Dissipation
a
a
T
A
=25
o
C
T
A
=70
o
C
I
D
I
DM
I
S
3.7
2.9
8
1.05
1.15
0.7
-55 to 150
A
W
o
A
T
A
=25
o
C
T
A
=70 C
o
P
D
T
J
, T
stg
Operating Junction and Storage Temperature Range
C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
t <= 10 sec
Steady State
Symbol
R
thJA
Typ
93
130
Max
110
150
o
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
PRELIMINARY
Publication Order Number:
DS-AM3998_D
ANALOGPOWER [ ANALOG POWER ]
