Analog Power
P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize
High Cell Density process. Low r
DS(on)
assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are PWMDC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.
•
•
•
Low r
DS(on)
Provides Higher Efficiency and
Extends Battery Life
Miniature SO-8 Surface Mount Package Saves
Board Space
High power and current handling capability
AM4463P
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
m(Ω)
13 @ V
GS
= -4.5V
-20
19 @ V
GS
= -2.5V
35 @ V
GS
= -1.8V
I
D
(A)
-11.5
-10
-7.7
1
2
3
4
8
7
6
5
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol Maximum Units
Drain-Source Voltage
V
DS
-20
V
Gate-Source Voltage
±12
V
GS
Continuous Drain Current
Pulsed Drain Current
b
a
a
o
T
A
=25 C
T
A
=70 C
o
o
I
D
I
DM
I
S
-13.4
-8.4
±50
-2.1
3.1
2.0
A
W
o
A
Continuous Source Current (Diode Conduction)
Power Dissipation
a
T
A
=25 C
T
A
=70 C
o
o
P
D
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Case
a
Maximum Junction-to-Ambient
a
Symbol
R
θJC
R
θJA
t <= 5 sec
t <= 5 sec
Maximum
25
40
Units
o
C/W
o
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
January, 2004 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM4463_C
ANALOGPOWER [ ANALOG POWER ]
